• DocumentCode
    3041827
  • Title

    Fabrication of 30nm T-Gate High Electron Mobility Transistors Using a Bi-Layer of PMMA and UVIII

  • Author

    Boyd, E. ; Zhou, H. ; McLelland, H. ; Moran, D.A.J. ; Thoms, S. ; Thayne, I.G.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ.
  • fYear
    2004
  • fDate
    8-8 Dec. 2004
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    This work reports on the development and fabrication of high electron mobility transistors with a gate length of less than 30 nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bi-layer of PMMA and UVIII. This is then transferred into SiO2 gate support layer by a low damage dry-etch process. This method enables the fabrication of mechanically robust, ultra short T-gates to be realised
  • Keywords
    etching; high electron mobility transistors; lithography; silicon compounds; 30 nm; PMMA; SiO2; SiO2 gate support layer; T-gate; UVIII; bilithography; dry etch; high electron mobility transistors; Capacitive sensors; Cutoff frequency; Electrons; Fabrication; HEMTs; Indium phosphide; Lattices; MODFETs; Noise robustness; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
  • Conference_Location
    Brisbane, Qld.
  • Print_ISBN
    0-7803-8820-8
  • Type

    conf

  • DOI
    10.1109/COMMAD.2004.1577483
  • Filename
    1577483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3041827