Properties of InN Grown by Remote Plasma Enhanced Chemical Vapour Deposition

Author

Chen, P.P.T. ; Scott, Kevin ; Butcher, A. ; Wintrebert-Fouquet, M. ; Prince, K.E.

Author_Institution

Dept. of Phys., Macquarie Univ., North Ryde, NSW

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

85

Lastpage

88

Abstract

We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical absorption spectra show a broad range of the apparent band-gap from 0.90 to 2.18 eV, depending on the growth temperature. These two extreme apparent band-gaps are similar to the controversial values of 0.7 and 1.9 eV quoted in the InN band-gap debate. Along with optical absorption results, the influence of growth temperature on growth rate, and carrier concentration is discussed. The correlations between the carrier concentration, and shallow-donors (oxygen and hydrogen) in InN are also analysed

Keywords

III-V semiconductors; energy gap; indium compounds; plasma CVD; semiconductor growth; visible spectra; wide band gap semiconductors; 0.90 to 2.18 eV; InN; InN growth; RPECVD; carrier concentration; growth rate; growth temperature; optical absorption spectra; remote plasma enhanced chemical vapour deposition; sapphire substrates; Absorption; Chemical vapor deposition; Indium; Photonic band gap; Plasma chemistry; Plasma properties; Plasma temperature; Temperature dependence; Temperature distribution; Ultraviolet sources; Burstein-Moss effect; Keywords-InN; band gap; carrier concentration; growth rate; oxygen incorporation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577498

Filename

1577498