Proton Irradiation Induced Intermixing in In_xGa_1-xAs/InP Quantum Wells

Author

Gareso, P.L. ; Tan, H.H. ; Wong-Leung, J. ; Jagadish, C. ; Dao, L.V.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

93

Lastpage

96

Abstract

We have investigated the quantum well interdiffusion of In_xGa_1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×10¹⁴ H/cm² with subsequent annealing at 750° for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing

Keywords

III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; ion implantation; photoluminescence; proton effects; semiconductor quantum wells; 750 degC; In_xGa_1-xAs-InP; In_xGa_1-xAs/InP quantum wells; annealing; atomic intermixing; bandgap energy shift; photoluminescence; proton implantation; quantum well interdiffusion; quantum well intermixing; Annealing; Atomic measurements; Energy measurement; Energy resolution; Indium phosphide; Performance evaluation; Photoluminescence; Photonic band gap; Protons; Temperature; InGaAs quantum wells; Proton irradiation; interdiffusion; intermixing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577500

Filename

1577500