FRACS (fully radiative current path structure)-A high speed bipolar transistor with sub-0.1 mu m emitter

Author

Onai, T. ; Nakazato, K. ; Kiyota, Y. ; Nakamura, T.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

54

Lastpage

55

Abstract

It is shown that in the fully radiative current path structure (FRACS) transistor the maximum cutoff frequency (f/sub T/) is enhanced by the equivalent drift field induced in the base by the radiative diffusion current from a small emitter-base (E-B) junction to a large collector-base (C-B) junction. The f/sub T/ can be increased by reducing the emitter size as well as by reducing the base width. Theoretical analysis and experimental results show that the f/sub T/ is enhanced as the emitter becomes smaller. FRACS is thus a suitable structure for future sub-0.1- mu m emitter transistors.<>

Keywords

bipolar transistors; semiconductor technology; FRACS; base width; bipolar transistor; collector-base junction; emitter size; emitter transistors; emitter-base junction; equivalent drift field; fully radiative current path structure; maximum cutoff frequency; radiative diffusion current; Bipolar transistors; Boron; Current density; Electromagnetic interference; Electrons; Equations; Frequency; Paper technology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200643

Filename

200643