Epitaxial Silicon Microshell Vacuum-Encapsulated CMOS-Compatible 200 MHz Bulk-Mode Resonator

Author

Chen, Kuan-Lin ; Chandrahalim, Hengky ; Graham, Andrew B. ; Bhave, Sunil A. ; Howe, Roger T. ; Kenny, Thomas W.

Author_Institution

Stanford Univ., Stanford, CA

fYear

2009

fDate

25-29 Jan. 2009

Firstpage

23

Lastpage

26

Abstract

This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fQ (1.2times10¹² Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.

Keywords

VHF devices; microcavities; micromechanical resonators; radiofrequency oscillators; spectral analysers; CMOS compatible resonator; RF MEMS components; RF spectrum analyzers; bulk-mode resonator; dielectrically transduced resonator; episilicon encapsulation process; epitaxial silicon microshell vacuum encapsulated resonator; frequency 200 MHz; frequency 207 MHz; local oscillators; Capacitive sensors; Dielectric thin films; Electrodes; Encapsulation; Micromechanical devices; Packaging; Q factor; Radio frequency; Resonant frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on

Conference_Location

Sorrento

ISSN

1084-6999

Print_ISBN

978-1-4244-2977-6

Electronic_ISBN

1084-6999

Type

conf

DOI

10.1109/MEMSYS.2009.4805309

Filename

4805309