Enhanced hot-carrier degradation due to water in TEOS/O/sub 3/-oxide and water blocking effect of ECR-SiO/sub 2/

Author

Shimoyama, N. ; Machida, K. ; Murase, K. ; Tsuchiya, T.

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

94

Lastpage

95

Abstract

The effect of water and/or silanols in TEOS/O/sub 3/-oxide on hot-carrier degradation is discussed. Hot-carrier degradation in MOSFETs is a serious problem as the thickness of the TEOS/O/sub 3/-oxide interlayer dielectric increases. This results mainly from enhanced hot-electron trapping and also from interface-trap generation, which are related to water and/or silanols in TEOS/O/sub 3/-oxide diffusing into the gate oxide. It is pointed out that by applying an ECR (electron cyclotron resonance) SiO/sub 2/ layer under the TEOS/O/sub 3/-oxide layer, tolerance against hot-carrier damage is improved to the level of MOSFETs without the TEOS/O/sub 3/-oxide layer.<>

Keywords

dielectric thin films; hot carriers; insulated gate field effect transistors; interface electron states; oxidation; semiconductor device testing; water; ECR layer; MOSFETs; Si-SiO/sub 2/; TEOS/O/sub 3/-oxide layer; enhanced hot-electron trapping; hot-carrier degradation; interface-trap generation; interlayer dielectric; silanols; water blocking effect; Cyclotrons; Degradation; Fabrication; Hot carrier effects; Hot carriers; Laboratories; Large scale integration; MOSFETs; Morphology; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200665

Filename

200665