Suppression of the MOS transistor hot carrier degradation caused by water desorbed from intermetal dielectric

Author

Shimokawa, K. ; Usami, T. ; Tokitou, S. ; Hirashita, N. ; Yoshimaru, M. ; Ino, M.

Author_Institution

Oki Electric Co. Ltd., Tokyo, Japan

fYear

1992

fDate

2-4 June 1992

Firstpage

96

Lastpage

97

Abstract

The effects of absorbed water of spin-on glass (SOG) and tetraethylorthosilicate (TEOS)-O/sub 3/ NSG on MOS transistor hot carrier degradation were investigated. It was found that the absorbed water in SOG and TEOS-O/sub 3/ NSG film desorbs from the film during subsequent low temperature annealing and causes hot carrier degradation. It was also found that plasma CVD silicon oxide (P-SiO) deposited under certain conditions suppresses the hot carrier degradation drastically. Because the P-SiO film has a small water absorption rate, it blocks water penetration to the silicon surface.<>

Keywords

annealing; hot carriers; insulated gate field effect transistors; plasma CVD coatings; semiconductor device testing; silicon compounds; sorption; water; MOS transistor; NSG film; SOG; Si-SiO; TEOS; absorbed water; hot carrier degradation; intermetal dielectric; low temperature annealing; plasma CVD SiO; tetraethylorthosilicate; water absorption rate; water penetration suppression; Annealing; Chemical technology; Degradation; Dielectric devices; Dielectric measurements; Hot carriers; MOSFETs; Metallization; Plasma temperature; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on

Conference_Location

Seattle, WA, USA

Print_ISBN

0-7803-0698-8

Type

conf

DOI

10.1109/VLSIT.1992.200666

Filename

200666