Generation of Ultrasonic Waves from an Optically Driven GaAs Thin Film

Author

Izumoto, R. ; Nashima, S. ; Kubota, K. ; Vaccaro, P.O. ; Zanardi Ocampo, J.M. ; Saito, N. ; Hosoda, M.

Author_Institution

Osaka City Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

193

Lastpage

196

Abstract

We demonstrate an optically driven MEMS that moves when irradiated by light. The MEMS is constructed from a GaAs/InGaAs thin film. High-frequency optical pulses drive mechanical vibration of the film to generate ultrasonic waves in air. We also measured photoluminescence (PL) from the sample to explore the cause of the optical drive. Laser irradiation caused a redshift of the GaAs PL up to 960 nm as the laser power increased. Our result implies a local heating in the thin film that causes the PL redshift, which drives the thin film by thermal expansion

Keywords

III-V semiconductors; acoustic wave production; gallium arsenide; indium compounds; micromechanical devices; optical films; photoacoustic effect; photoluminescence; red shift; semiconductor thin films; thermal expansion; ultrasonic waves; GaAs-InGaAs; GaAs/InGaAs thin film; local heating; optically driven MEMS; photoluminescence; redshift; thermal expansion; ultrasonic wave generation; Gallium arsenide; Indium gallium arsenide; Micromechanical devices; Optical films; Optical pulse generation; Optical pulses; Power lasers; Transistors; Ultrasonic variables measurement; Vibrations; GaAs thin film; MEMS; Optically driven; component; ultrasonic wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577524

Filename

1577524