Electric Field Domain Formation in Multiple Finite Superlattices Separated with Thick Barriers

Author

Noma, S. ; Nashima, S. ; Hosoda, M.

Author_Institution

Dept. of Appl. Phys., Osaka City Univ.

fYear

2004

fDate

8-10 Dec. 2004

Firstpage

269

Lastpage

272

Abstract

We experimentally investigated electric field domain formation in a semiconductor structure that consists of multiple finite GaAs/AlGaAs superlattices separated with thick barriers. From the measurements of conductance oscillation and transition of the photoluminescence spectra associated with the Wannier-Stark localization, we studied the behavior of an electric field concentrated into the thick barrier and the superlattice regions

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; photoluminescence; semiconductor superlattices; GaAs-AlGaAs; GaAs/AlGaAs superlattices; Wannier-Stark localization; conductance oscillation; electric field domain formation; finite superlattices; multiple superlattices; photoluminescence spectra; semiconductor structure; thick barriers; Current-voltage characteristics; Electric variables measurement; Gallium arsenide; Laser excitation; Molecular beam epitaxial growth; P-i-n diodes; Photoconductivity; Photoluminescence; Semiconductor superlattices; Voltage; Wannier-Starklocalization; electric-field domain; superlattice;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577542

Filename

1577542