• DocumentCode
    3043702
  • Title

    Nano-Thickness Integrated Resonant Cantilevers with Surface-Stiffening Scheme for Ultra-Sensitive Detection of Trace Chemicals

  • Author

    Xia, Xiaoyuan ; Yang, Yongliang ; Li, Xinxin

  • Author_Institution
    Shanghai Inst. of Microsyst. & Inf., Technol., Chinese Acad. of Sci., Shanghai
  • fYear
    2009
  • fDate
    25-29 Jan. 2009
  • Firstpage
    328
  • Lastpage
    331
  • Abstract
    The paper reports an ultra-thin silicon resonant cantilever sensor with a novel through-cantilever doped piezoresistive sensing element and a Lorentz-force resonance exciting element integrated. Torsion-mode resonance is used where shear-stress piezoresistance can be used for the 95 nm-thick silicon nano-cantilever. Thanks to the ultra-thin cantilever where surface sensing effect becomes dominant, molecule specific-adsorption induces a compressive surface-stress that further causes axial-force-induced spring-stiffening of the nano-cantilever. With the surface modified by specific SAM (self-assembled monolayer), the surface-stiffening-induced frequency-shift exhibits an much higher sensitivity to trace trimethylamine vapor, compared to the conventional mass-loading frequency-shift.
  • Keywords
    cantilevers; chemical sensors; chemical variables measurement; elemental semiconductors; monolayers; piezoresistive devices; self-assembly; silicon; Lorentz-force resonance; Si; nanocantilever; nanothickness integrated resonant cantilevers; piezoresistive sensing element; self-assembled monolayer; shear-stress piezoresistance; surface-stiffening scheme; trace chemicals; ultra-sensitive detection; ultra-thin silicon resonant cantilever sensor; Chemicals; Compressive stress; Doping; Frequency; Magnetic fields; Magnetic resonance; Magnetic sensors; Piezoresistance; Silicon; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
  • Conference_Location
    Sorrento
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-2977-6
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2009.4805385
  • Filename
    4805385