• DocumentCode
    3044831
  • Title

    Surface-Temperature Control of Silicon Nanowires in Dry and Liquid Conditions

  • Author

    Akiyama, Soramichi ; Cheng, Y.T. ; Fattaccioli, J. ; Takama, N. ; Löw, P. ; Bergaud, C. ; Kim, B.J.

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
  • fYear
    2009
  • fDate
    25-29 Jan. 2009
  • Firstpage
    567
  • Lastpage
    570
  • Abstract
    In this paper we present the results of surface temperature control of silicon nanowires by using fluorescent thermometry at the nanometer scale. Rhodamine B is one of the stable fluorescent molecules, which rely on the characteristic of temperature-dependent change in fluorescent intensity, and it was used for nano-scale surface temperature sensing interface. The resistive heating on Si nanowires was carried out with applying voltage potential of 6~12 V. Surface-temperature measurement was performed by converting the changes in fluorescent intensity with calibration curve of Rhodamine B. The temperature at the central line along nanowires increasing from 30 degrees to 35~70 degrees was observed.
  • Keywords
    elemental semiconductors; fluorescence; nanosensors; nanowires; silicon; temperature control; temperature measurement; temperature sensors; thermometers; Rhodamine B; Si; calibration curve; fluorescent molecules; fluorescent thermometry; nano-scale surface temperature sensing interface; resistive heating; silicon nanowires; surface temperature control; temperature 30 degC; temperature 35 degC to 70 degC; voltage 6 V to 12 V; Anisotropic magnetoresistance; Fluorescence; Heating; Industrial control; Nanowires; Probes; Silicon; Temperature control; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
  • Conference_Location
    Sorrento
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-2977-6
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2009.4805445
  • Filename
    4805445