• DocumentCode
    3046426
  • Title

    Fully Differential Internal Electrostatic Transduction of a Lamé-Mode Resonator

  • Author

    Ziaei-Moayyed, M. ; Elata, D. ; Hsieh, J. ; Chen, J.-W.P. ; Quevy, E.P. ; Howe, R.T.

  • Author_Institution
    Stanford Univ., Stanford, CA
  • fYear
    2009
  • fDate
    25-29 Jan. 2009
  • Firstpage
    931
  • Lastpage
    934
  • Abstract
    This paper reports the parallel internal electrostatic transduction of a laterally driven Lame-mode polysilicon resonator. This resonator is fabricated using a manufacturable double nanogap process that provides ultrathin high-aspect ratio lateral gaps. The transduction electrodes are optimally placed and oriented to maximize electromechanical transduction efficiency for the fundamental Lame mode. A 128.15 MHz Lame-mode resonator is driven and sensed differentially with a 20 V DC polarization voltage: the motional resistance is about 30 kOmega and the quality factor Q > 12000 in air.
  • Keywords
    electrostatic devices; micromechanical resonators; Lame-mode resonator; fully differential internal electrostatic transduction; polysilicon resonator; Compressive stress; Dielectrics; Electrodes; Electrostatic measurements; Impedance; Internal stresses; Micromechanical devices; Q factor; Resonance; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2009. MEMS 2009. IEEE 22nd International Conference on
  • Conference_Location
    Sorrento
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-2977-6
  • Electronic_ISBN
    1084-6999
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2009.4805537
  • Filename
    4805537