Power semiconductors

Author

Johnson, Brian K. ; Hess, Herbert L.

Author_Institution

Idaho Univ., Moscow, ID, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

734

Abstract

The objective of this paper is present the data requirements for modeling power electronic devices to aid in modeling power converters for transient simulation studies. The presentation targets applications of power semiconductor devices commonly used in medium to high power applications: insulated gate bipolar transistors (IGBTs), thyristors (SCR), and gate turn-off thyristors (GTOs) and power diodes. The intended audience is power engineers modeling converters for transient simulations rather more than power converter designers. Low power, single-phase loads are beyond the scope of the presentation

Keywords

bipolar transistor switches; circuit simulation; insulated gate bipolar transistors; power bipolar transistors; power convertors; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; thyristors; GTO; data requirements; gate turn-off thyristors; insulated gate bipolar transistors; power IGBTs; power diodes; power electronic device modelling; power electronic devices; power semiconductor devices; thyristors; transient simulation studies; Circuits; Flexible AC transmission systems; HVDC transmission; Power electronics; Power semiconductor devices; Power system modeling; Power system simulation; Power system transients; Switches; Switching converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Engineering Society Winter Meeting, 2001. IEEE

Conference_Location

Columbus, OH

Print_ISBN

0-7803-6672-7

Type

conf

DOI

10.1109/PESW.2001.916948

Filename

916948