DocumentCode
3047233
Title
Deposition and properties of ZnO thin films on GaP nanowires
Author
Buc, D. ; Kovac, J. ; Caplovicova, M. ; Brath, T. ; Hasenohrl, S. ; Novak, Jiri
Author_Institution
Inst. of Electron. & Photonics, Slovak Univ. of Technol. in Bratislava, Bratislava, Slovakia
fYear
2012
fDate
11-15 Nov. 2012
Firstpage
307
Lastpage
310
Abstract
We have studied the properties of the prepared ZnO thin films on GaP nanowires deposited by reactive magnetron sputtering at different target-substrate geometry and deposition conditions. ZnO/GaP-NW core-shell structures were created on MOCVD-GaP NWs grown on Zn-doped GaP(111)B substrates. Some important physical properties of the ZnO films and core-shell GaP/ZnO heterojunctions were investigated.
Keywords
II-VI semiconductors; MOCVD; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; GaP:Zn; ZnO-GaP; core-shell structures; deposition; heterojunctions; nanowires; physical properties; reactive magnetron sputtering; target-substrate geometry; thin films; Films; Nanowires; Sputtering; Substrates; Surface morphology; Surface treatment; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4673-1197-7
Type
conf
DOI
10.1109/ASDAM.2012.6418536
Filename
6418536
Link To Document