DocumentCode
3047952
Title
Double Exposure and Double Patterning Studies with Inverse Lithography
Author
Kim, Sang-Kon
Author_Institution
Hanyang Univ., Ansan
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
80
Lastpage
81
Abstract
The automation methods of mask design are described in this paper for double exposure and double patterning by using inverse lithography. This attempts to synthesize the mask for the desired wafer pattern by inverting the forward model from mask to wafer. The combination of double exposure, double patterning, and inverse lithography is discussed for 20 nm half pitch pattern generation.
Keywords
masks; nanolithography; nanopatterning; automation methods; double exposure; double patterning; half pitch pattern generation; inverse lithography; mask design; size 20 nm; wafer pattern; Circuits; Costs; Diffraction; Etching; Lighting; Lithography; Mass production; Microelectronics; Physics; Self-assembly; double exposure; double patterning; inverse lithography; lithography; lithography simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456114
Filename
4456114
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