Etching Processes of Carbon Nanowalls Using Dual-frequency Parallel-plate Capacitively Coupled Plasma

Carbon nanowalls (CNWs) is synthesized using the radical injection plasma enhanced chemical vapor deposition (CVD) system. In the initial growth process of CNWs on a Si substrate fabricated by the system, the carbon thin film of approximately 10 nm in thickness is deposited for 1 minute before CNWs grow in the vertical direction. The thin film is etched by using dual-frequency parallel-plate capacitively coupled plasma. SEM images characterise the CNWs. The etching rates of the CNWs and the carbon thin film are 150 nm/min and 15 nm/min, respectively. In order to extend applications of CNWs, the carbon thin film is removed from CNWs.