DocumentCode
3049341
Title
Charging properties of Si nanocrystals with respect to the varied temperature
Author
Yang, Hongming ; Sung, Sam Yuan ; Choi, Y.J. ; Kim, Jin W. ; Kim, Yong Sin ; Kang, C.J.
Author_Institution
Myongji Univ., Yongin
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
246
Lastpage
247
Abstract
In this work, we analyzed electrical properties of Si nanocrystals (NCs) using scanning capacitance microscopy (SCM). Charging, discharging effects of a NC with respect to the various temperatures were characterized through the capacitance spectroscopy and SCM images.
Keywords
capacitance measurement; elemental semiconductors; nanoparticles; silicon; Si; charging properties; discharging effects; nanocrystals; scanning capacitance microscopy; Capacitance; Electrical engineering; Image analysis; Nanocrystals; Nanoscale devices; Physics; Scanning electron microscopy; Spectroscopy; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456196
Filename
4456196
Link To Document