DocumentCode
3049499
Title
First-Principle Study on Piezoresistance Effect in Silicon Nanowires
Author
Nakamura, Koichi ; Isono, Yoshitada ; Toriyama, Toshiyuki
Author_Institution
Ritsumeikan Univ., Kusatsu
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
268
Lastpage
269
Abstract
In this study, we have simulated the piezoresistance effect in bulk silicon and silicon nanowires (SiNWs) based on the first-principle calculations of model structures. The band structure changes according to stress was observed o the SiNWs model. The piezoresistance coefficients with respect to cross-sectional area of 50 nm SiNW together with SEM image of the model were presented.
Keywords
ab initio calculations; band structure; elemental semiconductors; nanowires; piezoresistance; scanning electron microscopy; silicon; SEM; Si; band structure; first-principle calculations; piezoresistance effect; silicon nanowires; size 50 nm; stress; Conducting materials; Conductivity; Crystalline materials; Effective mass; Nanostructured materials; Nanowires; Photonic band gap; Piezoresistance; Silicon; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456207
Filename
4456207
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