DocumentCode
3050350
Title
Characterization of the conduction mechanisms in polycrystalline alumina
Author
Zarbout, K. ; Ahmed, A.Si ; Moya, G. ; Damamme, G. ; Bernardini, J. ; Kallel, A.
Author_Institution
Inst. Mater. Microelectron. Nanosci. de Provence, Univ. Paul Cezanne, Marseille, France
fYear
2009
fDate
18-21 Oct. 2009
Firstpage
173
Lastpage
176
Abstract
This work shows that the recovery parameter Rs, used to investigate charge stability in polycrystalline alumina ceramics, can be connected with conduction mechanisms. This is achieved through a phenomenological model describing the SEE yield decay during electron irradiation. The insight provided by the new framework is utilized to identify the conduction mechanism involved in polycrystalline alumina containing only 150 ppm of various impurities. The enhancement of the parameter Rs with the temperature leads to an activation energy Ea of about 0.14 eV for grain diameters varying over the range 1.7-4.5 ¿m. This activation energy is attributed to hopping mechanism via localized states associated to impurities that have segregated at grain boundaries during the sintering process.
Keywords
alumina; ceramics; electron beam effects; grain boundary segregation; hopping conduction; impurities; localised states; secondary electron emission; sintering; Al2O3; SEE yield decay; activation energy; charge stability; conduction mechanisms; electron irradiation; grain boundary segregation; hopping mechanism; impurities; localized states; phenomenological model; polycrystalline alumina ceramics; recovery parameter; secondary electron emission; sintering process; size 1.7 mum to 4.5 mum; Ceramics; Current measurement; Detectors; Dielectrics and electrical insulation; Displacement measurement; Electron emission; Impurities; Optical materials; Scanning electron microscopy; Surface charging;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 2009. CEIDP '09. IEEE Conference on
Conference_Location
Virginia Beach, VA
ISSN
0084-9162
Print_ISBN
978-1-4244-4557-8
Electronic_ISBN
0084-9162
Type
conf
DOI
10.1109/CEIDP.2009.5377731
Filename
5377731
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