• DocumentCode
    3050350
  • Title

    Characterization of the conduction mechanisms in polycrystalline alumina

  • Author

    Zarbout, K. ; Ahmed, A.Si ; Moya, G. ; Damamme, G. ; Bernardini, J. ; Kallel, A.

  • Author_Institution
    Inst. Mater. Microelectron. Nanosci. de Provence, Univ. Paul Cezanne, Marseille, France
  • fYear
    2009
  • fDate
    18-21 Oct. 2009
  • Firstpage
    173
  • Lastpage
    176
  • Abstract
    This work shows that the recovery parameter Rs, used to investigate charge stability in polycrystalline alumina ceramics, can be connected with conduction mechanisms. This is achieved through a phenomenological model describing the SEE yield decay during electron irradiation. The insight provided by the new framework is utilized to identify the conduction mechanism involved in polycrystalline alumina containing only 150 ppm of various impurities. The enhancement of the parameter Rs with the temperature leads to an activation energy Ea of about 0.14 eV for grain diameters varying over the range 1.7-4.5 ¿m. This activation energy is attributed to hopping mechanism via localized states associated to impurities that have segregated at grain boundaries during the sintering process.
  • Keywords
    alumina; ceramics; electron beam effects; grain boundary segregation; hopping conduction; impurities; localised states; secondary electron emission; sintering; Al2O3; SEE yield decay; activation energy; charge stability; conduction mechanisms; electron irradiation; grain boundary segregation; hopping mechanism; impurities; localized states; phenomenological model; polycrystalline alumina ceramics; recovery parameter; secondary electron emission; sintering process; size 1.7 mum to 4.5 mum; Ceramics; Current measurement; Detectors; Dielectrics and electrical insulation; Displacement measurement; Electron emission; Impurities; Optical materials; Scanning electron microscopy; Surface charging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 2009. CEIDP '09. IEEE Conference on
  • Conference_Location
    Virginia Beach, VA
  • ISSN
    0084-9162
  • Print_ISBN
    978-1-4244-4557-8
  • Electronic_ISBN
    0084-9162
  • Type

    conf

  • DOI
    10.1109/CEIDP.2009.5377731
  • Filename
    5377731