DocumentCode
3051799
Title
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
fYear
1998
fDate
5-5 June 1998
Abstract
The following topics were dealt with: crystal growth; semi-insulating III-V compounds; non-stoichiometric III-V compounds; defects in III-V compounds; low-dimensional structures; group III-V oxides; group III-nitrides; silicon carbide; wide gap II-VI compounds; devices
Keywords
II-VI semiconductors; III-V semiconductors; crystal defects; crystal growth; semiconductor devices; semiconductor growth; silicon compounds; stoichiometry; wide band gap semiconductors; SiC; crystal growth; defects; devices; group III-V oxides; group III-nitrides; low-dimensional structures; nonstoichiometric III-V compounds; semi-insulating III-V compounds; wide gap II-VI compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA, USA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785063
Filename
785063
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