Large-area high-power THz emitter based on interdigitated electrodes

Author

Dreyhaupt, A. ; Winnerl, S. ; Dekorsy, T. ; Helm, M.

Author_Institution

Inst. fur Ionenstrahlphys. und Materforschung, Forschungszentrum Rossendorf, Dresden, Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

83

Lastpage

84

Abstract

We present a planar large-area photoconductor based on GaAs for impulsive generation of THz radiation. The device consists of an interdigitated electrode metal-semiconductor-metal structure (MSM) with 5 μm electrode spacing. The MSM structure is masked by an opaque metallization layer isolated from the MSM electrodes in a way that optical excitation takes place only in regions with unidirectional electric field. Constructive interference of the THz emission from accelerated carriers leads to amplitudes that are 10⁴ times higher than from the same MSM structure without second metallization layer.

Keywords

III-V semiconductors; electrodes; gallium arsenide; photoconducting devices; photoemission; submillimetre wave devices; submillimetre wave generation; 5 micron; GaAs; GaAs compounds; MSM electrodes; MSM structure; THz radiation; constructive interference; high power THz emitter; impulsive generation; interdigitated electrodes; large area photoconductor; metal-semiconductor-metal structure; opaque metallization layer; optical excitation; unidirectional electric field; Acceleration; Electrodes; Gallium arsenide; Laser excitation; Metallization; Optical pulse generation; Optical pumping; Optical scattering; Photoconductivity; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1421964

Filename

1421964