Progress of Be-based II-VI green to yellow laser diodes

Author

Tanaka, Shoji ; Kasai, J. ; Fujisaki, S. ; Tsuji, Satoshi ; Akimoto, Ryoichi ; Hasama, Toshifumi ; Ishikawa, Hiroshi

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

Be-based II-VI semiconductors can be expected as a laser material with longer lifetimes than conventional ZnSe-based II-VI semiconductors. Continuous-wave operation in green-to-yellow spectral region was demonstrated with BeZnCdSe quantum-well laser diodes. The lasing wavelength of the fabricated green and yellow laser diode was 543 nm and 571 nm, respectively. Light output power over 50 mw has been confirmed with a low threshold current density.

Keywords

II-VI semiconductors; beryllium compounds; cadmium compounds; current density; optical fabrication; quantum well lasers; wide band gap semiconductors; zinc compounds; Be-based II-VI green laser diodes; Be-based II-VI semiconductors; Be-based II-VI yellow laser diodes; BeZnCdSe; BeZnCdSe quantum-well laser diodes; continuous-wave operation; green-to-yellow spectral region; laser material; lasing wavelength; light output power; threshold current density; wavelength 543 nm; wavelength 571 nm; Diode lasers; Gallium nitride; Power generation; Semiconductor lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on

Conference_Location

Kyoto

Type

conf

DOI

10.1109/CLEOPR.2013.6599924

Filename

6599924