Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors

Author

Reid, Dave ; Millar, C. ; Roy, Goutam ; Roy, Sandip ; Sinnott, Richard ; Stewart, George ; Stewart, George ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

21

Lastpage

24

Abstract

The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary to accurately model random discrete dopant induced variability.

Keywords

CMOS integrated circuits; MOSFET; circuit simulation; nanoelectronics; Glasgow 3D device simulator; n-channel MOSFET; nanoCMOS transistors; random dopant induced threshold voltage fluctuations; Analytical models; Circuit simulation; Computational modeling; Fluctuations; MOSFETs; Nanoscale devices; Predictive models; Probability distribution; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648227

Filename

4648227