Monte Carlo investigation of potential fluctuation in 3D device structure

Author

Ohkura, Y. ; Suzuki, C. ; Mise, N. ; Matsuki, T. ; Eimori, T. ; Nakamura, M.

Author_Institution

Semicond. Leading Edge Technol., Inc., Tsukuba

fYear

2008

fDate

9-11 Sept. 2008

Firstpage

33

Lastpage

36

Abstract

The motions of particles are calculated in 3D structure to evaluate potential fluctuation. The results of homogeneous and thermal equilibrium systems are in good agreement with theoretical results. In 3D MOSFET, the potential fluctuation extends towards the depletion layer and deviation of the amplitude from theoretical value is observed and ascribed to hot electron energy distribution, so the conventional plasmon scattering model should be modified in non-uniform and non-equilibrium carrier distribution.

Keywords

MOSFET; Monte Carlo methods; hot carriers; 3D MOSFET; 3D device structure; Monte Carlo investigation; depletion layer; homogeneous equilibrium systems; hot electron energy distribution; non-equilibrium carrier distribution; non-uniform carrier distribution; plasmon scattering model; thermal equilibrium systems; Doping; Electrons; Fluctuations; MOSFET circuits; Monte Carlo methods; Optical scattering; Particle scattering; Plasma simulation; Plasma temperature; Plasmons; Monte Carlo; inhomogeneou; nonequilibrium; potential fluctuation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on

Conference_Location

Hakone

Print_ISBN

978-1-4244-1753-7

Type

conf

DOI

10.1109/SISPAD.2008.4648230

Filename

4648230