• DocumentCode
    3053665
  • Title

    Thermal Sensitivity of UBM Adhesion in WLCSP

  • Author

    Punzalan, Jaime C., Jr.

  • Author_Institution
    Analog Devices Inc., Gen. Trias
  • fYear
    2007
  • fDate
    8-10 Nov. 2007
  • Firstpage
    150
  • Lastpage
    154
  • Abstract
    Developments in WLCSP proved polyimide to be a good alternative to benzocyclobutene as a passivation material and dielectric interlayer. An interface adhesion failure between PI and Ni-V under bump metallurgy was reported after significant exposure to high temperature. This paper aims to provide a better understanding of thermal sensitivity of UBM/passivation adhesion through determination of activation energy. Four devices with different structures were exposed to different temperature settings and exposure times to simulate thermal degradation of UBM adhesion. Results showed that bump shear strength degrade exponentially with exposure to temperature. The time-to-failure equation was determined to follow the Arrhenius model.
  • Keywords
    adhesion; dielectric materials; metallurgy; passivation; shear strength; thermal analysis; wafer level packaging; wafer-scale integration; Arrhenius model; UBM adhesion; activation energy; bump metallurgy; dielectric interlayer; interface adhesion; passivation material; polyimide; shear strength; thermal degradation simulation; thermal sensitivity; time-to-failure equation; wafer level chip scale packaging; Adhesives; Diffusion bonding; Manufacturing; Packaging machines; Passivation; Polyimides; Resists; Temperature sensors; Wafer bonding; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Manufacturing and Technology, 31st International Conference on
  • Conference_Location
    Petaling Jaya
  • ISSN
    1089-8190
  • Print_ISBN
    978-1-4244-0730-9
  • Electronic_ISBN
    1089-8190
  • Type

    conf

  • DOI
    10.1109/IEMT.2006.4456447
  • Filename
    4456447