DocumentCode
3053665
Title
Thermal Sensitivity of UBM Adhesion in WLCSP
Author
Punzalan, Jaime C., Jr.
Author_Institution
Analog Devices Inc., Gen. Trias
fYear
2007
fDate
8-10 Nov. 2007
Firstpage
150
Lastpage
154
Abstract
Developments in WLCSP proved polyimide to be a good alternative to benzocyclobutene as a passivation material and dielectric interlayer. An interface adhesion failure between PI and Ni-V under bump metallurgy was reported after significant exposure to high temperature. This paper aims to provide a better understanding of thermal sensitivity of UBM/passivation adhesion through determination of activation energy. Four devices with different structures were exposed to different temperature settings and exposure times to simulate thermal degradation of UBM adhesion. Results showed that bump shear strength degrade exponentially with exposure to temperature. The time-to-failure equation was determined to follow the Arrhenius model.
Keywords
adhesion; dielectric materials; metallurgy; passivation; shear strength; thermal analysis; wafer level packaging; wafer-scale integration; Arrhenius model; UBM adhesion; activation energy; bump metallurgy; dielectric interlayer; interface adhesion; passivation material; polyimide; shear strength; thermal degradation simulation; thermal sensitivity; time-to-failure equation; wafer level chip scale packaging; Adhesives; Diffusion bonding; Manufacturing; Packaging machines; Passivation; Polyimides; Resists; Temperature sensors; Wafer bonding; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing and Technology, 31st International Conference on
Conference_Location
Petaling Jaya
ISSN
1089-8190
Print_ISBN
978-1-4244-0730-9
Electronic_ISBN
1089-8190
Type
conf
DOI
10.1109/IEMT.2006.4456447
Filename
4456447
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