DocumentCode
3053666
Title
Strain effects on ballistic current in ultrathin DG SOI MOSFETs
Author
Minari, Hideki ; Mori, Nobuya
Author_Institution
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
149
Lastpage
152
Abstract
Atomistic electron transport simulation based on a nonequilibrium Greenpsilas function method and a tight-binding approximation has been performed for h110i-channel strained Si ultrathin double-gate silicon-on-insulator MOSFETs on a (100) substrate. Simulation results show that the tensile strain enhances the ballistic current, while the compressive strain gives opposite results.
Keywords
Green´s function methods; MOSFET; approximation theory; silicon; Si; atomistic electron transport simulation; ballistic current; nonequilibrium Greenpsilas function method; silicon ultrathin double-gate silicon-on-insulator MOSFET; strain effects; tight-binding approximation; Capacitive sensors; Computational modeling; Crystallization; Electrons; Green´s function methods; MOSFETs; Silicon on insulator technology; Tensile strain; Tunneling; Uniaxial strain; MOSFET; NEGF method; Silicon; Simulation; Strain; Tight-binding;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648259
Filename
4648259
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