Modifying electron transfer at the silicon-molecule interface using atomic tethers

Author

Hacker, Christina A.

Author_Institution

Electron. & Electr. Eng. Lab., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Modifying the electrical properties of the silicon interface is of prime interest for next generation electronics. Scaling of conventional electronics is increasing the importance of electronic contributions from the near surface region while bulk contributions are becoming less important. We report a detailed ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) investigation of the electronic properties of the silicon molecule interface to understand the change in work function and the contributions due to charge transfer (band bending) and surface dipole (electron affinity).

Keywords

X-ray photoelectron spectra; charge exchange; electrons; ultraviolet photoelectron spectra; Si; UPS; X-ray photoelectron spectroscopy; XPS; atomic tether; band bending; charge transfer; electrical properties; electron affinity; electron transfer; silicon-molecule interface; surface dipole; ultraviolet photoelectron spectroscopy; Bonding; Charge transfer; Educational institutions; Electrons; Laboratories; NIST; OFETs; Silicon; Spectroscopy; Uninterruptible power systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378029

Filename

5378029