DocumentCode
3054530
Title
Monte Carlo simulation of Cu-resistivity
Author
Wang Zhuo Yan ; Du Gang ; Feng, Kang Jin ; Liu Xiao Yan ; Ruqi, Han
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing
fYear
2008
fDate
9-11 Sept. 2008
Firstpage
321
Lastpage
324
Abstract
We have developed an optimized model for electron behavior in Cu-line and we have implemented it using Monte Carlo method. Our model takes into account not only four normal scatterings but also the grain boundary scattering and the surface roughness scattering. The model has been tested with different line width and providing a good agreement with both calculated results and ITRS data.
Keywords
Monte Carlo methods; copper; electrical resistivity; grain boundaries; integrated circuit interconnections; surface roughness; Monte Carlo simulation; copper resistivity; electron behavior; grain boundary scattering; surface roughness scattering; Acoustic scattering; Conductivity; Copper; Electrons; Grain boundaries; Monte Carlo methods; Phonons; Plasma temperature; Rough surfaces; Surface roughness; Cu-resistivity; Monte Carlo simutlation; gain boundary scattering; surface roughness scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location
Hakone
Print_ISBN
978-1-4244-1753-7
Type
conf
DOI
10.1109/SISPAD.2008.4648302
Filename
4648302
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