• DocumentCode
    3055169
  • Title

    Atomistic simulations for SiGe pMOS devices — Bandstructure to transport

  • Author

    Mehrotra, Saumitra R. ; Paul, Abhijeet ; Luisier, Mathieu ; Klimeck, Gerhard

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have presented an atomistic approach for treating SiGe pMOSFET devices. A novel tight-binding bandstructure parametrization has been developed and validated for bulk SiGe. It has then been applied to ballistic simulation of quantum confined SiGe nanowire pMOS and compared to experimental result.
  • Keywords
    Ge-Si alloys; MOSFET; nanowires; SiGe pMOSFET device; atomistic simulation; ballistic simulation; bulk SiGe; quantum confined SiGe nanowire pMOS; tight-binding bandstructure parametrization; Capacitive sensors; Computational modeling; Effective mass; Electron devices; Germanium silicon alloys; MOS devices; MOSFETs; Nanoscale devices; Potential well; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378065
  • Filename
    5378065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055169