• DocumentCode
    3056577
  • Title

    Resistive switching mechanisms of High-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

  • Author

    Das, Atanu ; Maikap, S. ; Chang, L.B.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Novel nonvolatile resistive switching memory device using Gd203 as solid electrolytes in a Cu and IrOx/Gd203/W structure have been studied for the first time. The switching mechanism with Cu as top electrode is owing to Cu filament formation and Cu filament dissolution. On the other hand the switching with IrOx as top electrode is owing to the oxygen vacancy movement and related barrier height variation.
  • Keywords
    memory architecture; random-access storage; switching circuits; Cu; IrOx; barrier height variation; filament formation; nonvolatile resistive switching memory device; oxygen vacancy movement; resistive switching mechanism; Chromium; Electrodes; Energy consumption; Hafnium oxide; Hysteresis; Power engineering and energy; Reliability engineering; Scalability; Solids; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378130
  • Filename
    5378130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056577