DocumentCode
3057121
Title
Epitaxial graphene top-gate FETs on silicon substrates
Author
Kang, Hyun-Chul ; Karasawa, Hiromi ; Miyamoto, Yu. ; Handa, Hiroyuki ; Fukidome, Hirokazu ; Suemitsu, Tetsuya ; Suemitsu, Maki ; Otsuji, Taiichi
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
Epitaxial graphene channel top-gate FETs on Si substrates are fabricated and their transistor operation is observed. Although the device characteristics is still primitive, this approach is a promising way to put graphene to the mainstream of the semiconductor manufacturing of the beyond-CMOS era.
Keywords
CMOS integrated circuits; field effect transistors; graphene; semiconductor device manufacture; silicon; substrates; C; CMOS era; Si; channel top-gate FET; epitaxial graphene; semiconductor manufacturing; silicon substrates; transistor operation; Annealing; Contact resistance; Electrodes; FETs; Gold; Plasma applications; Plasma chemistry; Plasma devices; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378157
Filename
5378157
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