Structural and electrical properties of InN nanowires grown by chemical vapor deposition

This paper reports on high-quality and controlled growth of single crystalline InN nanowires (NWs) synthesized by chemical vapor deposition (CVD) technique. Growth rate as high as 30 ¿m/hour was achieved by the vapor-liquid-solid (VLS) mechanism in a horizontal tube furnace. The NWs bent spontaneously, or were deflected by other NWs or patterned SiO₂ barrier at angles multiples of 30°. Also the excellent mobility and carrier density exhibited by the fabricated NW FET is a remarkable improvement. These demonstrations of the barrier induced growth redirection and the improved material property of the NWs will lead to the realization of controllable nanostructures that can be utilized as novel electronic devices and sensors.