Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by few-cycle Terahertz pulses

Author

Lee, Yun-Shik ; Jameson, A.D. ; Tomaino, J.L. ; Prineas, J.P. ; Steiner, J.T. ; Kira, M. ; Koch, S.W.

Author_Institution

Dept. of Phys., Oregon State Univ., Corvallis, OR, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The exciton binding energy in GaAs-based quantum-well (QW) structures is in the range of ~10 meV, which falls in the terahertz (THz) regime. THz-induced nonlinear optical effects of excitons in QWs are of great interest because they provide new insights into the quantum coherence and wavepacket dynamics in semiconductors. This paper presents a time-resolved study to observe resonant interactions of strong narrowband THz pulses with coherent excitons in QWs, where the THz radiation is tuned near the 1s-2p excitonic transition and the THz pulse duration (~3 ps) is comparable with the exciton dephasing time.

Keywords

III-V semiconductors; excitons; gallium arsenide; optical coherent transients; optical pulse generation; optical pumping; semiconductor quantum wells; terahertz wave generation; time resolved spectra; 1s-2p excitonic transition; GaAs; THz pulse duration; THz-induced nonlinear optical effects; binding energy; coherent excitons; exciton dephasing time; few-cycle terahertz pulses; quantum coherence; resonant interactions; semiconductor quantum wells; semiconductors; strong narrowband THz pulses; time-resolved study; ultrafast nonlinear optical effects; wavepacket dynamics; Delay effects; Excitons; Narrowband; Nonlinear optics; Optical pulses; Optical pumping; Pulse amplifiers; Resonance; Stimulated emission; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378213

Filename

5378213