Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

Author

Koh, Shao-Ming ; Sinha, Mantavya ; Tong, Yi ; Chin, Hock-Chun ; Fang, Wei-Wei ; Zhang, Xingui ; Ng, Chee-Mang ; Samudra, Ganesh ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

A novel approach exploiting the concept of NiSi:C/Si:C interface dipole engineering for electron barrier height Â¿_B ^N reduction is demonstrated in strained n-FinFETs using S⁺ ion implant. The new approach is simple and promising for reducing contact resistance R_CSD in advanced device architectures such as the FinFETs.

Keywords

MOSFET; carbon; contact resistance; elemental semiconductors; ion implantation; nickel compounds; silicon; sulphur; NiSi:C-Si:C; electron barrier height; interface dipole engineering; ion implantation; n-FinFET; nickel silicide contact resistance; silicon-carbon source-drain; sulfur implant; Computer aided manufacturing; Computer industry; Contact resistance; Educational institutions; FinFETs; Implants; Nickel; Pulp manufacturing; Semiconductor device manufacture; Silicides;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378216

Filename

5378216