• DocumentCode
    3058928
  • Title

    Charge trapping and current conduction mechanisms of advanced metal-oxide-semiconductor capacitors with LaxTay dual-doped HfON dielectrics

  • Author

    Cheng, Chin-Lung ; Horng, Jeng-Haur ; Chang-Liao, Kuei-Shu ; Jeng, Jin-Tsong ; Tsai, Hung-Yung

  • Author_Institution
    Inst. of Mech. & Electro-Mech. Eng., Nat. Formosa Univ., Huwei, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In summary, the improved characteristics in terms of EOT, D;t, SILC, and trap energy level are demonstrated by developing proper La¿Ta¿ doping into HfON dielectrics.
  • Keywords
    MOS capacitors; dielectric materials; electron traps; hafnium compounds; HfON; La??Ta?? doping; La¿Ta¿ doping; charge trapping; current conduction mechanisms; dielectrics; metal-oxide-semiconductor capacitors; trap energy level; Computer science; Dielectric devices; Educational institutions; Energy states; Hafnium; High K dielectric materials; MOS capacitors; Radio frequency; Rapid thermal annealing; Systems engineering and theory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378236
  • Filename
    5378236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3058928