• DocumentCode
    3059200
  • Title

    P-type and undoped InGaN across the entire alloy composition range

  • Author

    Wang, Kangping ; Araki, Takeshi ; Yu, K.M. ; Katsuki, Takayuki ; Mayer, M.A. ; Alarcon-Llado, E. ; Ager, J.W. ; Walukiewicz, W. ; Nanishi, Y.

  • Author_Institution
    Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report a systematic study on undoped and Mg-doped InGaN grown by molecular beam epitaxy. Various experiments have been combined to demonstrate p-type InGaN across the entire alloy composition range.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; magnesium; molecular beam epitaxial growth; semiconductor epitaxial layers; wide band gap semiconductors; InGaN; InGaN:Mg; Mg-doped InGaN; alloy composition; molecular beam epitaxy; p-type InGaN; undoped InGaN; Conferences; Electrooptical waveguides; Lasers and electrooptics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600220
  • Filename
    6600220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059200