Pyroelectric films synthesized by low-temperatures and laser-processed for uncooled infrared detector applications

Infrared (IR) photon detectors based on III-V semiconductor quantum structures such as type-II superlattices and quantum well infrared photodetectors (QWIPs) require atomically flat interfaces, which are achieved through expensive, high-vacuum growth techniques such as molecular beam epitaxy (MBE). These structures are fabricated into detector arrays which are bump-bonded to silicon (Si) read-out integrated circuits (ROICs). IR detector applications involving high resolution and fast refresh rates use highly sensitive photon detectors which require external cooling; making them bulky, expensive, and therefore impractical for equipping each soldier on the battlefield.