Proposal of heavily doped silicon between insulators MOSFETs and confirmation of their advantages by device simulation

Author

Yamada, T. ; Miyazawa, Y. ; Nakajima, Y. ; Hanajiri, T. ; Toyabe, T. ; Sugano, T.

Author_Institution

Bio-Nano Electron. Res. Centre, Toyo Univ., Kawagoe, Japan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The performance of short channel silicon between insulators (SBI) MOSFETs and the proposal of heavily doped silicon between insulators (HDSBI) MOSFETs, in which silicon region between local buried oxide (BOX) regions is heavily doped are presented. The electrical and thermal advantages in short-channel regions over conventional SBI MOSFET are verified by device simulation. Also, electrical properties of these MOSFETs considering thermal effects, impact ionisation, and quantum effect will be presented.

Keywords

MOSFET; elemental semiconductors; heavily doped semiconductors; ionisation; silicon; Si; device simulation; heavily doped silicon between insulators MOSFET; impact ionisation; local buried oxide regions; quantum effect; short channel silicon; short channel silicon between insulator MOSFET; thermal effects; Charge carrier processes; Educational institutions; Insulation; Leakage current; MOSFETs; Permittivity; Poisson equations; Proposals; Semiconductor films; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378307

Filename

5378307