Carrier dynamics in energy states of InAs/GaAs quantum dots by measuring selective carrier filling and extracting techniques

Author

Kim, Jin Soak ; Kim, Eun Kyu ; Kim, Jun Oh ; Lee, Sang Jun ; Noh, Sam Kyu ; Han, Il-Ki

Author_Institution

Dept. of Phys., Hanyang Univ., Seoul, South Korea

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

In summary, the specification of energy levels and size dependence of energy level properties in InAs/GaAs quantum dots (QDs) were studied by using deep-level transient spectroscopy (DLTS) with very small pulse and varying the bias. It appears that the small sized InAs QDs have only one energy state with 121 meV below conduction band edge of GaAs barrier but the large sized QDs have several levels. Then, these total energy levels in QDs were specified. From the signal amplitudes, the population of carrier in single level could be estimated to be 1-2 electrons.

Keywords

III-V semiconductors; carrier mobility; energy states; gallium arsenide; indium compounds; semiconductor quantum dots; InAs-GaAs; carrier dynamics; carrier filling; deep-level transient spectroscopy; energy level; energy state; extracting technique; quantum dots; Carrier confinement; Energy measurement; Energy states; Filling; Gallium arsenide; Optical buffering; Optical devices; Quantum dots; Size measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378313

Filename

5378313