DocumentCode
3060659
Title
Photonic crystal surface emitting lasers based on epitaxial regrowth
Author
Taylor, R.J.E. ; Williams, D.M. ; Shepherd, L.R. ; Childs, D.T.D. ; Stevens, B.J. ; Khamas, S. ; Groom, K.M. ; Hogg, R.A. ; Ikeda, N. ; Sugimoto, Yoshiki
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
Design optimization of semiconductor photonic crystal laser (PCSEL) structure is discussed Mode confinement is compared for all-semiconductor and void PCSELs. A re-grown PCSEL, lasing at room-temperature based on GaAs/InGaP re-growth is realised, and device characteristics are described.
Keywords
epitaxial growth; laser modes; photonic crystals; semiconductor growth; semiconductor lasers; surface emitting lasers; GaAs-InGaP; PCSEL; design optimization; epitaxial regrowth; mode confinement; photonic crystal surface emitting lasers; semiconductor photonic crystal laser; Couplings; Photonic crystals; Refractive index; Semiconductor waveguides; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600281
Filename
6600281
Link To Document