• DocumentCode
    3060833
  • Title

    Compound semiconductor nanowires for optoelectronic devices

  • Author

    Gao, Q. ; Jiang, N. ; Joyce, H. ; Paiman, S. ; Wong-Leung, J. ; Lee, Young-Hyun ; Fu, L. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We review various III-V compound semiconductor nanowires grown by MOCVD, mainly focusing on their phase control, optical and structural properties and some prototype optoelectronic devices based on these nanowires including solar cells and lasers.
  • Keywords
    III-V semiconductors; MOCVD; nanowires; optoelectronic devices; semiconductor lasers; solar cells; III-V compound semiconductor nanowires; MOCVD; lasers; optoelectronic devices; phase control; solar cells; Charge carrier lifetime; Crystals; Gallium arsenide; Gold; Indium phosphide; Nanowires; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600288
  • Filename
    6600288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3060833