Study on ultra-thin gate dielectrics: surface preparation and reliability

Author

Lin, Jia ; Shumin, Chai ; Qiuxia, Xu ; He, Qian

Author_Institution

Microelectron. R&D Center, Acad. Sinica, Beijing, China

fYear

1998

fDate

1998

Firstpage

120

Lastpage

122

Abstract

Wafer preparation and breakdown characteristics are some of the major issues of gate dielectrics in the deep sub-micron regime. In this paper, conventional and a modified HF-last cleaning methods were performed and compared. Dry oxide, N₂O oxynitride and oxide grown on N implanted substrate were used to prepare several kinds of gate dielectrics. The results indicate that after trace amount of IPA was added to HF solution in HF-last cleaning, gate dielectrics showed superior electrical properties. The N₂O oxynitride sample had higher Q_bd than the O₂ oxide sample. In addition, the reversed relation between gate oxide thickness and N implantation dose was observed. Poor breakdown characteristics of gate oxide grown on N implanted substrate was obtained

Keywords

dielectric thin films; electric breakdown; ion implantation; nitridation; oxidation; reliability; surface cleaning; HF; HF solution; HF-last cleaning methods; IPA; N implantation dose; N implanted substrate; N₂O oxynitride; SiNO; SiO₂; breakdown characteristics; deep sub-micron regime; dry oxide; electrical properties; gate oxide thickness; reliability; surface preparation; ultra-thin gate dielectrics; wafer preparation; Cleaning; Dielectric breakdown; Dielectric substrates; Electric breakdown; Hafnium; Helium; Leakage current; Microelectronics; Research and development; Surface contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785816

Filename

785816