DocumentCode
3063107
Title
290 V high voltage NMOSFET with two different doping level drift regions by compatible 1.5 μm CMOS technology
Author
Haitao, Zhang ; Weijian, Zhao ; Dongmin, Ding ; Dingkang, Zhang ; Ping, Xu
Author_Institution
Hua Ko Electron. Co. Ltd., Hong Kong
fYear
1998
fDate
1998
Firstpage
145
Lastpage
148
Abstract
This paper reports on a novel device, a high voltage NMOSFET with two different doping level drift regions. The device is compatible with 1.5 μm CMOS technology. The two different doped regions are formed with n well implantation and n field implantation in standard CMOS process. The experimental result shows that the die breakdown voltage of this NMOSFET is from 120 V to 290 V according to different structures, such as drift length and drift doping level
Keywords
doping profiles; ion implantation; power MOSFET; semiconductor device breakdown; 1.5 micron; 120 to 290 V; CMOS technology; die breakdown voltage; doping level drift regions; drift length; high voltage NMOSFET; n field implantation; n well implantation; Automotive electronics; Breakdown voltage; CMOS process; CMOS technology; Digital signal processing chips; Displays; Doping; Electric breakdown; Low voltage; MOSFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785830
Filename
785830
Link To Document