A deep trench isolation for silicon

Author

Qingping, Wang ; Zhengfan, Zhang ; Kaicheng, Li ; Lin, Guo ; Wu, Xiangdong ; Zihang, Wang

Author_Institution

Nat. Key Lab., Analog Integrated Circuits, Chongqing, China

fYear

1998

fDate

1998

Firstpage

172

Lastpage

175

Abstract

A novel deep trench isolation for silicon is described. The materials used in the study are Φ100, p-type, <100>, 7-12 Ω-cm silicon wafers. It has been observed from the SEM micrograph that the width of silicon trench is 2 μm, and that the depth of silicon trench is 6.5 μm. There is almost no poly-silicon void in the trenches. The height of surface steps is less than 50 nm. Also a trench breakdown voltage of 35 V has been obtained. The leakage current for the isolation is less than 3 nA/35 V

Keywords

elemental semiconductors; isolation technology; leakage currents; scanning electron microscopy; semiconductor device breakdown; silicon; 2 micron; 35 V; 6.5 micron; 7 to 12 ohmcm; SEM micrograph; Si; deep trench isolation; leakage current; polysilicon void; surface step height; trench breakdown voltage; trench depth; trench width; Anisotropic magnetoresistance; Automatic control; Control systems; Dielectrics; Etching; Isolation technology; Planarization; Silicon; Temperature control; Weight control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785843

Filename

785843