• DocumentCode
    3063257
  • Title

    High speed low cost BiCMOS for RF applications using profile engineering

  • Author

    Minghui, Gao ; Haijun, Zhao ; Bandyopadhyay, Abhijit ; Jiang, Cao ; Dow, Foo Pang

  • Author_Institution
    Inst. of Microelectron., Singapore
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    176
  • Lastpage
    179
  • Abstract
    This paper describes a low cost, CMOS foundry compatible BiCMOS process for 1.9 GHz RF applications. It keeps the simple feature of the triple-well single-poly approach while achieving much higher fT by utilizing novel c-well profile engineering to reduce base and collector series resistance
  • Keywords
    BiCMOS integrated circuits; UHF integrated circuits; high-speed integrated circuits; integrated circuit technology; 1.9 GHz; CMOS foundry compatible process; RF applications; base series resistance reduction; c-well profile; collector series resistance reduction; high speed BiCMOS; low cost BiCMOS; profile engineering; triple-well single-poly process; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Costs; Foundries; Frequency response; Implants; Radio frequency; Radiofrequency integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785845
  • Filename
    785845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063257