Integration of CVD W on IMP Ti and TiN

Author

Tanaka, Yoichiro ; Yao, Congda ; Van Gogh, J. ; Herner, Brad ; Zhang, John Yue ; Wang, Hou Gong ; Buckley, Lawrence ; Chakravarthy, Pratap ; Mak, Alfred ; Ghanayem, Steve

Author_Institution

Metal Deposition Product Group, Appl. Mater. Inc., Santa Clara, CA, USA

fYear

1998

fDate

1998

Firstpage

207

Lastpage

210

Abstract

Chemical vapor deposition of tungsten (W) and physical vapor deposition of Ti/TiN was optimized to provide a minimum thickness TiN barrier while maintaining protection of Ti underlayer to prevent reaction with gases and W used in the CVD process. Improved ionized metal plasma (IMP) TiN deposition that minimized preferential TiN deposition on the via “lip”, coupled with W deposition that utilized a near 1:1 ratio of WF₆:SiH₄ gases in the nucleation film, resulted in vias with excellent step coverage of the W film in the via without interaction between the liner materials and CVD gases

Keywords

chemical vapour deposition; diffusion barriers; integrated circuit interconnections; integrated circuit metallisation; plasma deposition; titanium; titanium compounds; tungsten; CVD W; IMP Ti; SiH₄; Ti underlayer; TiN; TiN barrier; W deposition; W-Ti-TiN; WF₆; chemical vapor deposition; ionized metal plasma TiN deposition; nucleation film; physical vapor deposition; preferential TiN deposition; reaction; step coverage; tungsten; via; Gases; Hydrogen; Plasma sources; Rapid thermal annealing; Semiconductor films; Simulated annealing; Substrates; Thermal expansion; Tin; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785855

Filename

785855