Properties of CVD-W overgrowth on PVD and MOCVD TiN layers

Author

Peng, Y.C. ; Chen, L.J. ; Hsieh, W.Y. ; Yang, Y.R. ; Hsieh, Y.F.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

1998

fDate

1998

Firstpage

211

Lastpage

214

Abstract

The structure and electrical properties of CVD-W films on various PVD or MOCVD TiN films have been investigated. The growth orientations of the TiN adhesion layers were controlled by deposition method and film thickness. The growth orientations of CVD-W films were found to depend strongly on the microstructures of TiN. The grain sizes and electrical resistivity of CVD-W were found to increase and decrease, respectively, with the grain sizes of underlying TIN layers

Keywords

adhesion; chemical vapour deposition; crystal orientation; diffusion barriers; electrical resistivity; grain size; integrated circuit metallisation; interface structure; metallic thin films; titanium compounds; tungsten; CVD-W films; CVD-W overgrowth; MOCVD TiN layers; PVD TiN layers; TiN; W-TiN; deposition method; electrical properties; electrical resistivity; film thickness; grain sizes; growth orientations; microstructures; structure; Adhesives; Atherosclerosis; Collimators; Electric resistance; Grain size; MOCVD; Microstructure; Plasma temperature; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-4306-9

Type

conf

DOI

10.1109/ICSICT.1998.785856

Filename

785856