DocumentCode
3063466
Title
A grain structure based statistical simulation of temperature and current density dependence of electromigration
Author
Korhonen, T.M. ; Brown, D.D. ; Korhonen, M.A. ; Li, C.-Y.
Author_Institution
Dept. of Mater. Sci. & Eng., Cornell Univ., Ithaca, NY, USA
fYear
1998
fDate
1998
Firstpage
215
Lastpage
218
Abstract
Although current density exponents and activation energies are well-known for the elemental processes (like void nucleation due to electromigration generated stress) there is no consensus on which apparent activation energy or current density exponent values should be used in reliability estimates for realistic line structures comprising regimes of both bamboo and polycrystalline sections. In this contribution a Monte-Carlo approach was used to generate realistic-like line structures, and their electromigration lifetimes were simulated. For a given grain structure distribution, the stress evolution along the line was simulated, letting voids nucleate and grow until the largest one reached the specified critical size, resulting in a “failure”. By repeating this process for various current densities and temperatures, it was possible to extract the apparent activation energies and current density exponents from the simulation data
Keywords
Monte Carlo methods; crystal microstructure; current density; electromigration; integrated circuit interconnections; life testing; semiconductor process modelling; voids (solid); Monte-Carlo approach; activation energies; activation energy; bamboo sections; critical size; current density dependence; current density exponents; electromigration; electromigration lifetimes; failure; grain structure based statistical simulation; grain structure distribution; line structures; polycrystalline sections; reliability; stress evolution; temperature dependence; void nucleation; voids; Current density; Data mining; Electromigration; Life estimation; Materials reliability; Materials science and technology; Power engineering and energy; Temperature dependence; Temperature distribution; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785857
Filename
785857
Link To Document