DocumentCode
3063680
Title
Multilayer solid phase reaction and epitaxial growth of metal silicide on Si
Author
Li, Bing-Zong ; Qu, Xin-Ping ; Ru, Guo-Ping ; Mo, Hong-Xiang ; Liu, Jing
Author_Institution
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
fYear
1998
fDate
1998
Firstpage
251
Lastpage
255
Abstract
Co-silicide/Si hetero-epitaxial growth by solid phase reaction of various multilayers with a Ti-interlayer and its mechanism are studied and discussed
Keywords
Auger electron spectra; Rutherford backscattering; X-ray diffraction; atomic force microscopy; chemical interdiffusion; cobalt compounds; elemental semiconductors; epitaxial layers; rapid thermal annealing; silicon; solid phase epitaxial growth; AES; AFM; Co-Ti-Si; CoSi2-Si; RBS; Ti-interlayer; XRD; epitaxial growth; metal silicide; multilayer solid phase reaction; multilayers; rapid thermal annealing; Epitaxial growth; Fabrication; Integrated circuit interconnections; Large Hadron Collider; Nonhomogeneous media; Silicidation; Silicides; Solids; Very large scale integration; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785867
Filename
785867
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