DocumentCode
3063775
Title
Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy
Author
Qu, Xin-Ping ; Ru, Guo-Ping ; Li, Bing-Zong ; Jie-Qin ; Jiang, Zui-min ; Chu, Paul
Author_Institution
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
fYear
1998
fDate
1998
Firstpage
268
Lastpage
270
Abstract
A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2 /Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements
Keywords
Rutherford backscattering; cobalt compounds; elemental semiconductors; molecular beam epitaxial growth; rapid thermal annealing; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; silicon; solid phase epitaxial growth; surface treatment; transmission electron microscopy; RTA; Rutherford backscattering; Si; Si(100); Si-CoSi2-Si; double heterostructure; heteroepitaxial growth; molecular beam epitaxy; solid phase epitaxy; surface treatment; transmission electron microscopy; Crystallization; Epitaxial growth; Etching; Ion beams; Lattices; Molecular beam epitaxial growth; Rapid thermal annealing; Solids; Spectroscopy; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785871
Filename
785871
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